2SD1962M

Properties at a glance

  • hFE
    120
    β
  • Ic
    5
    A
  • Pc
    0.3
    W
  • Pol
    NPN
  • Tj
    150
    °C
  • TranMat
    Si
  • Vcb
    30
    V
  • Vce
    20
    V

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Component Package & Description

Part number 2SD1962M is reportedly available in a ATR package.

External Resources

Properties and Attributes

Forward Current Transfer Ratio hFE
120 β
Maximum Collector Current Ic
5 A
Maximum Power Dissipation Pc
0.3 W
Polarity Pol
NPN
Maximum Junction Temperature Tj
150 °C
Material of Transistor TranMat
Si
Maximum Collector-Base Voltage Vcb
30 V
Maximum Collector-Emitter Voltage Vce
20 V