850AT

Properties at a glance

  • Cc
    6
    pF max
  • ft
    300
    MHz typ
  • hFE
    110
    β
  • Ic
    0.1
    A
  • Pc
    0.15
    W
  • Pol
    NPN
  • Tj
    150
    °C
  • TranMat
    Si
  • Vcb
    50
    V
  • Vce
    45
    V
  • Veb
    5
    V

Find similar components to the 850AT by clicking the properties (above) that you want to match.

Component Package & Description

Part number 850AT is reportedly available in a SOT523 package.

External Resources

Properties and Attributes

Collector Capacity Cc
max 6 pF
Transition Frequency ft
typ 300 MHz
Forward Current Transfer Ratio hFE
110 β
Maximum Collector Current Ic
0.1 A
Maximum Power Dissipation Pc
0.15 W
Polarity Pol
NPN
Maximum Junction Temperature Tj
150 °C
Material of Transistor TranMat
Si
Maximum Collector-Base Voltage Vcb
50 V
Maximum Collector-Emitter Voltage Vce
45 V
Maximum Emitter-Base Voltage Veb
5 V